vishay byg20 document number 86009 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 1 15811 super fast avalanche smd rectifier features ? glass passivated junction low reverse current soft recovery characteristics fast reverse recovery time good switching characteristics wave and reflow solderable applications surface mounting fast rectifier freewheeling diodes in smps and converters snubber diodes parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byg20d v r = 200 v @ i fav = 1.5 a do-214ac BYG20G v r = 400 v @ i fav = 1.5 a do-214ac byg20j v r = 600 v @ i fav = 1.5 a do-214ac parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage byg20d v r = v rrm 200 v BYG20G v r = v rrm 400 v byg20j v r = v rrm 600 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj
www.vishay.com 2 document number 86009 rev. 5, 07-jan-03 vishay byg20 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition part symbol value unit junction lead t l = const. - - r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w parameter test condition part symbol min ty p. max unit forward voltage i f = 1 a v f 1.3 v i f = 1.5 a v f 1.4 v reverse current v r = v rrm i r 1 a v r = v rrm , t j = 100 c i r 10 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 75 ns figure 1. forward current vs. forward voltage i ? forward current ( a) 0.001 0.010 0.100 1.000 10.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f ? forward voltage ( v ) 16443 f t j =25 c t j =150 c figure 2. max. average forward current vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 t amb ? ambient temperature ( c ) 16444 i ? average forward current ( a ) fav v r =v rrm half sinewave r thja 25k/w r thja 125k/w r thja 150k/w
vishay byg20 document number 86009 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 3 figure 3. reverse current vs . junction temperature figure 4. max. reverse power dissipation vs. junction temperature figure 5. diode capacitance vs. reverse voltage 1 10 100 25 50 75 100 125 150 t j ? junction temperature ( c ) 16445 v r = v rrm i ? reverse current ( a ) r 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t j ? junction temperature ( c ) 16446 v r = v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100%v r p r ?limit @80%v r 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 v r ? reverse voltage ( v ) 16447 c ? diode capacitance ( pf ) d f=1mhz figure 6. max. reverse recove ry time vs. forward current figure 7. max. reverse recovery charge vs. forward current 0 0.2 0.4 0.6 0.8 0 100 200 300 400 600 t ? reverse recovery time ( ns ) rr i f ? forward current ( a ) 1.0 94 9343 500 25 c 75 c 100 c t amb =125 c 50 c i r =0.5a, i r =0.125a 0 50 100 150 200 q ? reverse recovery charge ( nc ) rr 94 9344 0 0.2 0.4 0.6 0.8 i f ? forward current ( a ) 1.0 t amb =75 c t amb =100 c t amb =125 c t amb =50 c i r =0.5a, i r =0.125a t amb =25 c
www.vishay.com 4 document number 86009 rev. 5, 07-jan-03 vishay byg20 vishay semiconductors package dimensions in mm figure 8. thermal response 1 10 100 1000 z ? thermal resistance for pulse cond. (k/w ) thp t p ? pulse length ( s ) 94 9339 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc 14275-1 2.15 0.15 0.1 0.07 0.2 5.3 +0.2 / -0.4 4.4 3 +0.3 / -0.5 2.6 +0.2 / -0.3 1.5 +0.2 / -0.1 iso method e +0.1 / -0.2 plastic case jedec do 214 similar to sma cathode indicated b y a b and technical dra w ings according to di n specifications
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